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IPD60R750E6ATMA1

Non-unpack
Specification
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
1736
  • Details
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  • Guarantee
Infineon IPD60R750E6ATMA1 is available at Allchips.100% original and new guarantee. If comprehensive data for IPD60R750E6ATMA1 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - continuous drain current
5.7 A
Rds On - Drain-Source On-Resistance
680 mOhms
Vgs th - gate-source threshold voltage
2.5 V
Vgs - gate-source voltage
20 V
Qg - gate charge
17.2 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
12 ns
Height
2.3 mm
Length
6.5 mm
Pd - Power Dissipation
48 W
Rise Time
7 ns
Series
CoolMOS E6
Factory packing quantity
2500
Transistor type
1 N-Channel
Typical shutdown delay time
50 ns
Typical turn-on delay time
9 ns
Width
6.22 mm
Unit weight
4 g

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TNT TNT $25.00-$65.00(0.50KG) 2-5 days
EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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