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IPD90N03S4L02ATMA1
Specification
Trans MOSFET N-CH 30V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
1908
MPQ
1
Stock
2441
MOQ
25
Tiered Quantity
US Dollar
25
$0.9779
50
$0.9588
100
$0.9167
200
$0.9014
1000
$0.8734
2000
$0.8568
Lead Time:6-12
Days
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IPD90N03S4L02ATMA1
is available at Allchips.100% original and new guarantee. If comprehensive data for
IPD90N03S4L02ATMA1
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - continuous drain current
90 A
Rds On - Drain-Source On-Resistance
1.8 mOhms
Vgs th - gate-source threshold voltage
1 V
Vgs - gate-source voltage
16 V
Qg - gate charge
140 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
13 ns
Height
2.3 mm
Length
6.5 mm
Pd - Power Dissipation
136 W
Rise Time
9 ns
Series
XPD90N03
Factory packing quantity
2500
Transistor type
1 N-Channel
Typical shutdown delay time
62 ns
Typical turn-on delay time
14 ns
Width
6.22 mm
Unit weight
4 g
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