Specification
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Brand
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Item Category
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BatchNumber
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-262-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - continuous drain current
10.6 A
Rds On - Drain-Source On-Resistance
380 mOhms
Vgs - gate-source voltage
20 V
Qg - gate charge
32 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Fall time
9 nS
Height
9.45 mm
Length
10.2 mm
Pd - Power Dissipation
83 W
Rise Time
10 nS
Series
CoolMOS C6
Factory packing quantity
500
Transistor type
1 N-Channel
Typical shutdown delay time
110 nS
Width
4.5 mm
Unit weight
2.387 g