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IPP200N15N3 G

Non-unpack
Specification
--
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
--
MPQ
500
Stock
0
MOQ
500
Tiered Quantity
US Dollar
1
$20.1591
10
$17.1171
100
$13.6773
500
$12.0042
1000
$9.9216
2500
$9.2781
5000
$8.9622
10000
$8.5644
 
Lead Time:5-7 Days
Stock Limited
  • Details
  • Shipping
  • Payment Method
  • Guarantee
Infineon IPP200N15N3 G is available at Allchips.100% original and new guarantee. If comprehensive data for IPP200N15N3 G to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-220-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
150 V
Id - continuous drain current
50 A
Rds On - Drain-Source On-Resistance
16 mOhms
Vgs th - gate-source threshold voltage
2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
31 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Channel mode
Enhancement
Fall time
6 ns
Forward transconductance - minimum
29 S
Height
15.65 mm
Length
10 mm
Pd - Power Dissipation
150 W
Rise Time
11 ns
Series
OptiMOS 3
Factory packing quantity
500
Transistor type
1 N-Channel
Typical shutdown delay time
23 ns
Typical turn-on delay time
14 ns
Width
4.4 mm
Unit weight
6 g

Shipping Type Ship Fee Lead Time Processing Time
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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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