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IPP60R360P7XKSA1
Specification
--
Mf Part No.
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Brand
Infineon
Item Category
MOSFET
BatchNumber
--
MPQ
500
Stock
0
MOQ
500
Tiered Quantity
US Dollar
1
$12.402
10
$10.4832
100
$8.4006
500
$7.3359
1000
$6.084
2500
$5.6628
5000
$5.4522
10000
$5.2416
Lead Time:5-7
Days
Stock Limited
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- Shipping
- Payment Method
- Guarantee
Infineon
IPP60R360P7XKSA1
is available at Allchips.100% original and new guarantee. If comprehensive data for
IPP60R360P7XKSA1
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-220-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - continuous drain current
9 A
Rds On - Drain-Source On-Resistance
0.305 Ohms
Vgs th - gate-source threshold voltage
3 V
Vgs - gate-source voltage
20 V
Qg - gate charge
13 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
10 ns
Pd - Power Dissipation
41 W
Rise Time
7 ns
Series
CoolMOS P7
Factory packing quantity
500
Transistor type
1 N-Channel
Typical shutdown delay time
42 ns
Typical turn-on delay time
8 ns
Unit weight
1.800 g
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