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IPP65R190C6

Non-unpack
Specification
--
Mf Part No.
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Brand
Infineon
Item Category
MOSFET
BatchNumber
--
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Infineon IPP65R190C6 is available at Allchips.100% original and new guarantee. If comprehensive data for IPP65R190C6 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-220-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - continuous drain current
20.2 A
Rds On - Drain-Source On-Resistance
170 mOhms
Vgs th - gate-source threshold voltage
2.5 V
Vgs - gate-source voltage
20 V
Qg - gate charge
73 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Qualifications
AEC-Q100
Channel mode
Enhancement
Fall time
10 ns
Height
15.65 mm
Length
10 mm
Pd - Power Dissipation
151 W
Rise Time
12 ns
Series
CoolMOS C6
Factory packing quantity
500
Transistor type
1 N-Channel
Typical shutdown delay time
133 ns
Typical turn-on delay time
13 ns
Width
4.4 mm
Unit weight
1.800 g

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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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