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IRF200B211

Specification

Mf Part No.

Brand

Infineon

Item Category

MOSFET

BatchNumber

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Specification

RoHS

yes

Technology

Installation style

Through Hole

Package / case

TO-220-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

200 V

Id - continuous drain current

12 A

Rds On - Drain-Source On-Resistance

170 mOhms

Vgs th - gate-source threshold voltage

3 V

Vgs - gate-source voltage

20 V

Qg - gate charge

15.3 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 175 C

Configuration

Single

Channel mode

Enhancement

Fall time

6.5 ns

Forward transconductance - minimum

13 S

Height

15.65 mm

Length

10 mm

Pd - Power Dissipation

80 W

Rise Time

9.5 ns

Factory packing quantity

Typical shutdown delay time

11.3 ns

Typical turn-on delay time

6.5 ns

Width

4.4 mm

Unit weight

2.300 g

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FedEX	$20.00-$40.00(0.50KG)	3-7 days