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IRF200B211
Specification
--
Mf Part No.
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Brand
Infineon
Item Category
MOSFET
BatchNumber
--
MPQ
1000
Stock
0
MOQ
1000
Tiered Quantity
US Dollar
1
$7.605
10
$6.4584
100
$4.9608
500
$4.3875
1000
$3.4515
2000
$3.0771
10000
$2.9484
25000
$2.8665
Lead Time:5-7
Days
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Infineon
IRF200B211
is available at Allchips.100% original and new guarantee. If comprehensive data for
IRF200B211
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-220-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
200 V
Id - continuous drain current
12 A
Rds On - Drain-Source On-Resistance
170 mOhms
Vgs th - gate-source threshold voltage
3 V
Vgs - gate-source voltage
20 V
Qg - gate charge
15.3 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Channel mode
Enhancement
Fall time
6.5 ns
Forward transconductance - minimum
13 S
Height
15.65 mm
Length
10 mm
Pd - Power Dissipation
80 W
Rise Time
9.5 ns
Factory packing quantity
50
Typical shutdown delay time
11.3 ns
Typical turn-on delay time
6.5 ns
Width
4.4 mm
Unit weight
2.300 g
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