Specification
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Brand
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BatchNumber
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-220-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
200 V
Id - continuous drain current
12 A
Rds On - Drain-Source On-Resistance
170 mOhms
Vgs th - gate-source threshold voltage
3 V
Vgs - gate-source voltage
20 V
Qg - gate charge
15.3 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Channel mode
Enhancement
Fall time
6.5 ns
Forward transconductance - minimum
13 S
Height
15.65 mm
Length
10 mm
Pd - Power Dissipation
80 W
Rise Time
9.5 ns
Factory packing quantity
50
Typical shutdown delay time
11.3 ns
Typical turn-on delay time
6.5 ns
Width
4.4 mm
Unit weight
2.300 g
