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IRF5305SPBF
Specification
Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK Tube
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
1722
MPQ
1
Stock
9129
MOQ
125
Tiered Quantity
US Dollar
123
$0.5509
500
$0.4809
1000
$0.4789
Lead Time:6-12
Days
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- Shipping
- Payment Method
- Guarantee
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IRF5305SPBF
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IRF5305SPBF
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 55 V
Id - continuous drain current
- 31 A
Rds On - Drain-Source On-Resistance
60 mOhms
Vgs - gate-source voltage
20 V
Qg - gate charge
42 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Channel mode
Enhancement
Fall time
63 ns
Height
2.3 mm
Length
6.5 mm
Pd - Power Dissipation
110 W
Rise Time
66 ns
Factory packing quantity
1000
Transistor type
1 P-Channel
Types
HEXFET Power MOSFET
Typical shutdown delay time
39 ns
Typical turn-on delay time
14 ns
Width
6.22 mm
Unit weight
4 g
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