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IRFR120NTRLPBF
Specification
Trans MOSFET N-CH 100V 9.4A 3-Pin(2+Tab) DPAK T/R
Mf Part No.
--
Brand
Infineon
Item Category
MOSFET
BatchNumber
1721
MPQ
3000
Stock
3000
MOQ
3000
Tiered Quantity
US Dollar
3000
$0.2419
Lead Time:6-12
Days
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IRFR120NTRLPBF
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IRFR120NTRLPBF
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - continuous drain current
9.4 A
Rds On - Drain-Source On-Resistance
210 mOhms
Vgs th - gate-source threshold voltage
4 V
Vgs - gate-source voltage
20 V
Qg - gate charge
25 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Fall time
23 ns
Forward transconductance - minimum
2.7 S
Height
2.3 mm
Length
6.5 mm
Pd - Power Dissipation
48 W
Rise Time
23 ns
Factory packing quantity
3000
Transistor type
1 N-Channel
Typical shutdown delay time
32 ns
Typical turn-on delay time
4.5 ns
Width
6.22 mm
Unit weight
4 g
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