Specification
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - continuous drain current
86 A
Rds On - Drain-Source On-Resistance
6.5 mOhms
Vgs th - gate-source threshold voltage
2.25 V
Qg - gate charge
26 nC
The maximum working temperature
+ 175 C
Configuration
Single
Fall time
3.9 ns
Forward transconductance - minimum
51 S
Height
2.3 mm
Length
6.5 mm
Pd - Power Dissipation
79 W
Rise Time
12 ns
Transistor type
1 N-Channel
Width
6.22 mm
Unit weight
4 g
