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IRG4PF50WPBF

Non-unpack
Specification
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
Mf Part No.
--
Brand
Infineon
Item Category
IGBT Transistors
BatchNumber
1815
  • Details
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  • Guarantee
Infineon IRG4PF50WPBF is available at Allchips.100% original and new guarantee. If comprehensive data for IRG4PF50WPBF to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Package / case
TO-247-3
Installation style
Through Hole
Configuration
Single
Collector - Emitter maximum voltage VCEO
900 V
Collector - emitter saturation voltage
2.25 V
Gate / emitter maximum voltage
+/- 20 V
Continuous collector current at 25 ° C
51 A
Pd - Power Dissipation
200 W
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Collector maximum continuous current Ic
51 A
Gate-emitter leakage current
100 nA
Height
20.7 mm (Max)
Length
15.87 mm (Max)
Factory packing quantity
25
Width
5.31 mm (Max)
Unit weight
38 g

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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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