Specification
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MPQ
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MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-220-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - continuous drain current
36 A
Rds On - Drain-Source On-Resistance
44 mOhms
Vgs th - gate-source threshold voltage
2 V
Vgs - gate-source voltage
16 V
Qg - gate charge
49.3 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Fall time
62 ns
Forward transconductance - minimum
14 S
Height
15.65 mm
Length
10 mm
Pd - Power Dissipation
140 W
Rise Time
81 ns
Transistor type
1 N-Channel
Typical shutdown delay time
39 ns
Typical turn-on delay time
11 ns
Width
4.4 mm
Unit weight
6 g
