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APT56M50B2
Specification
--
Mf Part No.
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Brand
MICROSEMI
Item Category
MOSFET
BatchNumber
--
MPQ
1
Stock
0
MOQ
1
Tiered Quantity
US Dollar
1
$94.4658
10
$85.9131
25
$79.4313
50
$75.114
100
$72.4698
250
$66.1518
500
$61.9983
1000
$55.2708
Lead Time:5-7
Days
If you need it, please contact our customer service
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MICROSEMI
APT56M50B2
is available at Allchips.100% original and new guarantee. If comprehensive data for
APT56M50B2
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
T-MAX-3
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - continuous drain current
56 A
Rds On - Drain-Source On-Resistance
85 mOhms
Vgs th - gate-source threshold voltage
4 V
Vgs - gate-source voltage
30 V
Qg - gate charge
220 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Channel mode
Enhancement
Fall time
33 ns
Forward transconductance - minimum
43 S
Height
5.31 mm
Length
21.46 mm
Pd - Power Dissipation
780 W
Rise Time
45 ns
Factory packing quantity
1
Typical shutdown delay time
100 ns
Typical turn-on delay time
38 ns
Width
16.26 mm
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