Specification
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Mf Part No.
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Brand
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Item Category
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BatchNumber
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MPQ
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Stock
Lead time
MOQ
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Tiered Quantity
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Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
T-MAX-3
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - continuous drain current
56 A
Rds On - Drain-Source On-Resistance
85 mOhms
Vgs th - gate-source threshold voltage
4 V
Vgs - gate-source voltage
30 V
Qg - gate charge
220 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Channel mode
Enhancement
Fall time
33 ns
Forward transconductance - minimum
43 S
Height
5.31 mm
Length
21.46 mm
Pd - Power Dissipation
780 W
Rise Time
45 ns
Factory packing quantity
1
Typical shutdown delay time
100 ns
Typical turn-on delay time
38 ns
Width
16.26 mm
