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APT75GN60LDQ3G

Non-unpack
Specification
Trans IGBT Chip N-CH 600V 155A 3-Pin(3+Tab) TO-264
Mf Part No.
--
Brand
MICROSEMI
Item Category
IGBT Transistors
BatchNumber
1813
  • Details
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MICROSEMI APT75GN60LDQ3G is available at Allchips.100% original and new guarantee. If comprehensive data for APT75GN60LDQ3G to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Package / case
TO-264-3
Installation style
Through Hole
Configuration
Single
Collector - Emitter maximum voltage VCEO
600 V
Collector - emitter saturation voltage
1.45 V
Gate / emitter maximum voltage
30 V
Continuous collector current at 25 ° C
155 A
Pd - Power Dissipation
536 W
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Continuous collector current
155 A
Collector maximum continuous current Ic
155 A
Gate-emitter leakage current
600 nA
Height
5.21 mm
Length
26.49 mm
Range of working temperature
- 55 C to + 175 C
Factory packing quantity
1
Width
20.5 mm
Unit weight
10.600 g

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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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