Specification
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Mf Part No.
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Brand
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Item Category
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BatchNumber
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MPQ
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Stock
Lead time
MOQ
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Tiered Quantity
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Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-92-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
300 V
Id - continuous drain current
200 mA
Rds On - Drain-Source On-Resistance
12 Ohms
Vgs - gate-source voltage
20 V
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Depletion
Fall time
15 ns
Height
5.33 mm
Length
5.21 mm
Pd - Power Dissipation
740 mW
Product
MOSFET Small Signal
Rise Time
15 ns
Factory packing quantity
1000
Transistor type
1 N-Channel
Types
FET
Typical shutdown delay time
15 ns
Typical turn-on delay time
10 ns
Width
4.19 mm
Unit weight
453.600 mg
