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DN2530N3-G

Specification

Mf Part No.

Brand

Microchip

Item Category

MOSFET

BatchNumber

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Specification

RoHS

yes

Technology

Installation style

Through Hole

Package / case

TO-92-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

300 V

Id - continuous drain current

200 mA

Rds On - Drain-Source On-Resistance

12 Ohms

Vgs - gate-source voltage

20 V

Minimum working temperature

- 55 C

The maximum working temperature

+ 150 C

Configuration

Single

Channel mode

Depletion

Fall time

15 ns

Height

5.33 mm

Length

5.21 mm

Pd - Power Dissipation

740 mW

Product

MOSFET Small Signal

Rise Time

15 ns

Factory packing quantity

1000

Transistor type

1 N-Channel

Types

FET

Typical shutdown delay time

15 ns

Typical turn-on delay time

10 ns

Width

4.19 mm

Unit weight

453.600 mg

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