Specification
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Mf Part No.
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Brand
NXP Semiconductors
Item Category
RF Bipolar Transistors
BatchNumber
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NXP Semiconductors
BFT92,215
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BFT92,215
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Specification
Product Category
射频(RF)双极晶体管
Manufacturer
NXP
RoHS
yes
Transistor type
Bipolar
Technology
Si
Transistor polarity
PNP
直流集电极/Base Gain hfe Min
50
Collector - Emitter maximum voltage VCEO
- 15 V
Emitter-base voltage VEBO
2 V
Continuous collector current
- 25 mA
The maximum working temperature
+ 150 C
Configuration
Single
Installation style
SMD/SMT
Package / case
SOT-23
Trademark
NXP Semiconductors
Collector-base voltage VCBO
20 V
直流电流增益 hFE 最大值
20 at 14 mA at 10 V
Gain Bandwidth Product fT
5000 MHz
Height
1 mm (Max)
Length
3 mm (Max)
最大直流电集电极电流
0.025 A
Minimum working temperature
- 65 C
working frequency
5 GHz
Pd - Power Dissipation
300 mW
Factory packing quantity
3000
Types
RF Bipolar Small Signal
Width
1.4 mm (Max)
Part number aliases
BFT92 T/R
Unit weight
8 mg
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