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MRF085HR5

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Specification
Trans RF MOSFET N-CH 133V 5-Pin NI-650H T/R
Mf Part No.
--
Brand
NXP Semiconductors
Item Category
RF MOSFET Transistors
BatchNumber
1719
MPQ
1
Stock
48
MOQ
1
Tiered Quantity
US Dollar
1
$136.94
10
$130.88
25
$128.3
 
Lead Time:6-12 Days
Stock Limited
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  • Guarantee
NXP Semiconductors MRF085HR5 is available at Allchips.100% original and new guarantee. If comprehensive data for MRF085HR5 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Transistor polarity
Dual N-Channel
Id - continuous drain current
210 mA
Vds - Drain-Source Breakdown Voltage
133 V
Technology
Si
Gain
25.6 dB
Output Power
85 W
Minimum working temperature
- 40 C
The maximum working temperature
+ 150 C
Installation style
SMD/SMT
Package / case
NI-650H-4L
Number of channels
2 Channel
working frequency
1.8 MHz to 1215 MHz
Pd - Power Dissipation
235 W
Factory packing quantity
50
Types
RF Power MOSFET
Vgs - gate-source voltage
- 6 V , + 10 V
Vgs th - gate-source threshold voltage
1.5 V
Unit weight
0 mg

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Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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