Specification
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Mf Part No.
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Brand
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Item Category
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BatchNumber
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
DFN1010B-6
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 30 V
Id - continuous drain current
- 590 mA
Rds On - Drain-Source On-Resistance
670 mOhms
Vgs th - gate-source threshold voltage
450 mV
Vgs - gate-source voltage
8 V
Qg - gate charge
1.05 mC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Dual
Channel mode
Enhancement
Fall time
3 ns
Forward transconductance - minimum
600 mS
Pd - Power Dissipation
4.03 W
Rise Time
7 ns
Factory packing quantity
10000
Transistor type
P-Channel
Typical shutdown delay time
12 ns
Typical turn-on delay time
4 ns
