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2N5883G

Non-unpack
Specification
Trans GP BJT PNP 60V 25A 3-Pin(2+Tab) TO-3 Tray
Mf Part No.
--
Brand
ON Semiconductor
Item Category
Bipolar Transistors - BJT
BatchNumber
1716
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ON Semiconductor 2N5883G is available at Allchips.100% original and new guarantee. If comprehensive data for 2N5883G to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Installation style
Through Hole
Package / case
TO-204-2
Transistor polarity
PNP
Configuration
Single
Collector - Emitter maximum voltage VCEO
60 V
Collector-base voltage VCBO
60 V
Emitter-base voltage VEBO
5 V
Collector - emitter saturation voltage
1 V
Maximum DC collector current
25 A
Gain Bandwidth Product fT
4 MHz
The maximum working temperature
+ 150 C
Series
2N5883
Continuous collector current
25 A
DC collector / Base Gain hfe Min
20
Height
8.51 mm (Max)
Length
39.37 mm
Minimum working temperature
- 65 C
Pd - Power Dissipation
200 W
Factory packing quantity
100
Width
26.67 mm (Max)
Unit weight
12.247 g

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