Specification
Trans GP BJT PNP 50V 7A 40000mW 3-Pin(3+Tab) TO-220AB Tube
Mf Part No.
--
Brand
ON Semiconductor
Item Category
Bipolar Transistors - BJT
BatchNumber
1739
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ON Semiconductor
2N6109G
is available at Allchips.100% original and new guarantee. If comprehensive data for
2N6109G
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk,
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Specification
RoHS
yes
Installation style
Through Hole
Package / case
TO-220-3
Transistor polarity
PNP
Configuration
Single
Collector - Emitter maximum voltage VCEO
50 V
Collector-base voltage VCBO
60 V
Emitter-base voltage VEBO
5 V
Collector - emitter saturation voltage
3.5 V
Maximum DC collector current
7 A
Gain Bandwidth Product fT
10 MHz
The maximum working temperature
+ 150 C
Series
2N6109
Continuous collector current
7 A
DC collector / Base Gain hfe Min
30
Height
15.75 mm
Length
10.53 mm
Minimum working temperature
- 65 C
Pd - Power Dissipation
40 W
Factory packing quantity
50
Width
4.83 mm
Unit weight
6 g
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