Pictures for reference only, please check the datasheet
2SA2012-TD-E
Specification
Trans GP BJT PNP 30V 5A 4-Pin(3+Tab) SOT-89 T/R
Mf Part No.
--
Brand
ON Semiconductor
Item Category
Bipolar Transistors - BJT
BatchNumber
1804
MPQ
1
Stock
4000
MOQ
61
Tiered Quantity
US Dollar
61
$0.2803
100
$0.1899
250
$0.1709
500
$0.1538
Lead Time:6-12
Days
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- Payment Method
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2SA2012-TD-E
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2SA2012-TD-E
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Specification
RoHS
yes
Installation style
SMD/SMT
Package / case
SOT-89-3
Transistor polarity
PNP
Configuration
Single
Collector - Emitter maximum voltage VCEO
- 30 V
Collector-base voltage VCBO
- 30 V
Emitter-base voltage VEBO
- 5 V
Collector - emitter saturation voltage
- 140 mV
Maximum DC collector current
- 5 A
Gain Bandwidth Product fT
350 MHz
The maximum working temperature
+ 150 C
Series
2SA2012
DC collector / Base Gain hfe Min
200
DC current gain hFE maximum
560
Pd - Power Dissipation
3.5 W
Factory packing quantity
1000
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