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2SA2012-TD-E

Non-unpack
Specification
Trans GP BJT PNP 30V 5A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Mf Part No.
--
Brand
ON Semiconductor
Item Category
Bipolar Transistors - BJT
BatchNumber
2029
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  • Guarantee
ON Semiconductor 2SA2012-TD-E is available at Allchips.100% original and new guarantee. If comprehensive data for 2SA2012-TD-E to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Installation style
SMD/SMT
Package / case
SOT-89-3
Transistor polarity
PNP
Configuration
Single
Collector - Emitter maximum voltage VCEO
- 30 V
Collector-base voltage VCBO
- 30 V
Emitter-base voltage VEBO
- 5 V
Collector - emitter saturation voltage
- 140 mV
Maximum DC collector current
- 5 A
Gain Bandwidth Product fT
350 MHz
The maximum working temperature
+ 150 C
Series
2SA2012
DC collector / Base Gain hfe Min
200
DC current gain hFE maximum
560
Pd - Power Dissipation
3.5 W
Factory packing quantity
1000

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FedEX $20.00-$40.00(0.50KG) 3-7 days
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