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2SA2125-TD-E

Non-unpack
Specification
Trans GP BJT PNP 50V 3A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Mf Part No.
--
Brand
ON Semiconductor
Item Category
Bipolar Transistors - BJT
BatchNumber
1731
MPQ
1
Stock
60
MOQ
49
Tiered Quantity
US Dollar
49
$0.3143
 
Lead Time:6-12 Days
Stock Limited
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  • Guarantee
ON Semiconductor 2SA2125-TD-E is available at Allchips.100% original and new guarantee. If comprehensive data for 2SA2125-TD-E to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Installation style
SMD/SMT
Package / case
SOT-89-3
Transistor polarity
PNP
Configuration
Single
Collector - Emitter maximum voltage VCEO
- 50 V
Collector-base voltage VCBO
- 50 V
Emitter-base voltage VEBO
- 6 V
Collector - emitter saturation voltage
- 125 mV, - 250 mV
Maximum DC collector current
- 6 A
Gain Bandwidth Product fT
390 MHz
The maximum working temperature
+ 150 C
Series
2SA2125
Continuous collector current
- 3 A
DC collector / Base Gain hfe Min
200
DC current gain hFE maximum
560
Pd - Power Dissipation
3.5 W
Factory packing quantity
1000

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