2SD1816S-TL-E

Specification

Trans GP BJT NPN 100V 4A 1000mW 3-Pin(2+Tab) DPAK T/R

Mf Part No.

Brand

ON Semiconductor

Item Category

Bipolar Transistors - BJT

BatchNumber

MPQ

2100

Stock

16800

MOQ

2100

Tiered Quantity

US Dollar

2100

$0.47

Lead Time:6-12 Days

Inquiry

Details
Shipping
Payment Method
Guarantee

ON Semiconductor 2SD1816S-TL-E is available at Allchips.100% original and new guarantee. If comprehensive data for 2SD1816S-TL-E to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS

yes

Transistor polarity

NPN

Configuration

Single

Collector - Emitter maximum voltage VCEO

100 V

Emitter-base voltage VEBO

6 V

Maximum DC collector current

4 A

Gain Bandwidth Product fT

130 MHz

The maximum working temperature

+ 150 C

Series

2SD1816

Height

2.3 mm

Minimum working temperature

- 55 C

Pd - Power Dissipation

20 W

Factory packing quantity

700

Width

6.5 mm

	Ship Fee	Lead Time	Processing Time
DHL	$20.00-$40.00(0.50KG)	2-5 days	Shipping fee depend on different zone and country
UPS	$20.00-$45.00(0.50KG)	2-5 days
TNT	$25.00-$65.00(0.50KG)	2-5 days
EMS	$25.00-$45.00(0.50KG)	4-15 days
Air, Sea/air and Sea	$2.00-$3.00(0.10KG)	7-30 days
FedEX	$20.00-$40.00(0.50KG)	3-7 days