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ATP112-TL-H
Specification
Trans MOSFET P-CH Si 60V 25A Automotive 3-Pin(2+Tab) ATPAK T/R
Mf Part No.
--
Brand
ON Semiconductor
Item Category
MOSFET
BatchNumber
--
MPQ
3000
Stock
3000
MOQ
3000
Tiered Quantity
US Dollar
3000
$0.3757
Lead Time:6-12
Days
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ATP112-TL-H
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ATP112-TL-H
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
ATPAK-3
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 60 V
Id - continuous drain current
- 25 A
Rds On - Drain-Source On-Resistance
43 mOhms
Vgs - gate-source voltage
20 V
Qg - gate charge
33.5 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Fall time
120 ns
Forward transconductance - minimum
24 S
Pd - Power Dissipation
40 W
Rise Time
80 ns
Series
ATP112
Factory packing quantity
3000
Transistor type
1 P-Channel
Typical shutdown delay time
150 ns
Typical turn-on delay time
10 ns
Unit weight
4 g
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