Specification
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - continuous drain current
214 A
Rds On - Drain-Source On-Resistance
3 mOhms
Vgs th - gate-source threshold voltage
4 V
Vgs - gate-source voltage
20 V
Qg - gate charge
89 nC
Configuration
Single
Fall time
11 ns
Forward transconductance - minimum
167 S
Height
4.83 mm
Length
10.67 mm
Pd - Power Dissipation
333 W
Rise Time
54 ns
Series
FDB035N10A
Factory packing quantity
800
Transistor type
1 N-Channel
Width
9.65 mm
Unit weight
1.312 g
