Specification
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Mf Part No.
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Brand
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Item Category
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BatchNumber
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MPQ
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Lead time
MOQ
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Tiered Quantity
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
Power-33-8
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - continuous drain current
21 A
Rds On - Drain-Source On-Resistance
4.4 mOhms
Vgs - gate-source voltage
20 V
Qg - gate charge
37 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single Quad Drain Triple Source
Fall time
4 nS
Forward transconductance - minimum
106 S
Height
0.8 mm
Length
3.3 mm
Pd - Power Dissipation
36 W
Rise Time
5 nS
Series
FDMC8026S
Factory packing quantity
3000
Transistor type
1 N-Channel
Typical shutdown delay time
30 nS
Width
3.3 mm
Unit weight
165.330 mg
