Specification
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Brand
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BatchNumber
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
Power-56-8
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - continuous drain current
49 A
Rds On - Drain-Source On-Resistance
2.4 mOhms
Vgs th - gate-source threshold voltage
1.7 V
Vgs - gate-source voltage
20 V
Qg - gate charge
20 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Forward transconductance - minimum
168 S
Height
1.1 mm
Length
6 mm
Pd - Power Dissipation
59 W
Series
FDMS8023S
Factory packing quantity
3000
Transistor type
1 N-Channel
Width
5 mm
Unit weight
68.100 mg
