Specification
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Mf Part No.
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Brand
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Item Category
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BatchNumber
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MPQ
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Stock
Lead time
MOQ
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Tiered Quantity
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - continuous drain current
33 A
Rds On - Drain-Source On-Resistance
52 mOhms
Vgs - gate-source voltage
25 V
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Channel mode
Enhancement
Fall time
110 ns
Forward transconductance - minimum
22 S
Height
4.83 mm
Length
10.67 mm
Pd - Power Dissipation
3.75 W
Rise Time
195 ns
Series
FQB33N10
Factory packing quantity
800
Transistor type
1 N-Channel
Types
MOSFET
Typical shutdown delay time
80 ns
Typical turn-on delay time
15 ns
Width
9.65 mm
Unit weight
1.312 g
