Specification
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Mf Part No.
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Brand
ON Semiconductor
Item Category
Bipolar Transistor - Pre-Biased
BatchNumber
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ON Semiconductor
MUN5212DW1T1G
is available at Allchips.100% original and new guarantee. If comprehensive data for
MUN5212DW1T1G
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk,
alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Configuration
Dual
Transistor polarity
NPN
典型输入电阻器
22 kOhms
典型电阻器比率
1
Installation style
SMD/SMT
Package / case
SOT-363-6
直流集电极/Base Gain hfe Min
60
Collector - Emitter maximum voltage VCEO
50 V
Continuous collector current
0.1 A
峰值直流集电极电流
100 mA
Pd - Power Dissipation
187 mW
The maximum working temperature
+ 150 C
Series
MUN5212DW1
直流电流增益 hFE 最大值
60 at 5 mA at 10 V
Height
0.9 mm
Length
2 mm
Minimum working temperature
- 55 C
Factory packing quantity
3000
Width
1.25 mm
Unit weight
7.500 mg
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