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MUN5212DW1T1G

Specification

Mf Part No.

Brand

ON Semiconductor

Item Category

Bipolar Transistor - Pre-Biased

BatchNumber

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Specification

RoHS

yes

Configuration

Dual

Transistor polarity

NPN

典型输入电阻器

22 kOhms

典型电阻器比率

Installation style

SMD/SMT

Package / case

SOT-363-6

直流集电极/Base Gain hfe Min

Collector - Emitter maximum voltage VCEO

50 V

Continuous collector current

0.1 A

峰值直流集电极电流

100 mA

Pd - Power Dissipation

187 mW

The maximum working temperature

+ 150 C

Series

MUN5212DW1

直流电流增益 hFE 最大值

60 at 5 mA at 10 V

Height

0.9 mm

Length

2 mm

Minimum working temperature

- 55 C

Factory packing quantity

3000

Width

1.25 mm

Unit weight

7.500 mg

	Ship Fee	Lead Time	Processing Time
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