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NSV1C200MZ4T1G

Non-unpack
Specification
Trans GP BJT PNP 100V 2A Automotive 4-Pin(3+Tab) SOT-223 T/R
Mf Part No.
--
Brand
ON Semiconductor
Item Category
Bipolar Transistors - BJT
BatchNumber
1730
MPQ
1000
Stock
10000
MOQ
1000
Tiered Quantity
US Dollar
1
$0.2302
 
Lead Time:6-12 Days
Stock Limited
  • Details
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  • Guarantee
ON Semiconductor NSV1C200MZ4T1G is available at Allchips.100% original and new guarantee. If comprehensive data for NSV1C200MZ4T1G to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Installation style
SMD/SMT
Package / case
SOT-223-4
Transistor polarity
PNP
Configuration
Single
Collector - Emitter maximum voltage VCEO
- 100 V
Collector-base voltage VCBO
- 140 V
Emitter-base voltage VEBO
- 7 V
Collector - emitter saturation voltage
- 0.22 V
Maximum DC collector current
3 A
Gain Bandwidth Product fT
120 MHz
The maximum working temperature
+ 150 C
Series
NSS1C200
DC collector / Base Gain hfe Min
120
DC current gain hFE maximum
360 at - 500 mA at - 2 V
Minimum working temperature
- 55 C
Pd - Power Dissipation
2 W
Factory packing quantity
1000
Unit weight
112 mg

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