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NTLJF3117PT1G
Specification
--
Mf Part No.
--
Brand
ON Semiconductor
Item Category
MOSFET
BatchNumber
--
MPQ
3000
Stock
0
MOQ
3000
Tiered Quantity
US Dollar
1
$3.8376
10
$3.1473
100
$1.9305
1000
$1.4859
3000
$1.2753
9000
$1.1817
24000
$1.11969
45000
$1.09629
Lead Time:5-7
Days
If you need it, please contact our customer service
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NTLJF3117PT1G
is available at Allchips.100% original and new guarantee. If comprehensive data for
NTLJF3117PT1G
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
WDFN-6
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 20 V
Id - continuous drain current
- 3.3 A
Rds On - Drain-Source On-Resistance
100 mOhms
Vgs - gate-source voltage
8 V
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
13.2 ns, 15 ns
Forward transconductance - minimum
3.1 S
Height
0.75 mm
Length
2 mm
Pd - Power Dissipation
1.5 W
Product
MOSFET Small Signal
Rise Time
13.2 ns, 15 ns
Series
NTLJF3117P
Factory packing quantity
3000
Transistor type
1 P-Channel
Types
FETs - MOSFETs
Typical shutdown delay time
13.7 ns, 19.8 ns
Typical turn-on delay time
5.2 ns, 5.5 ns
Width
2 mm
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