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NTLJF3117PT1G

Non-unpack
Specification
--
Mf Part No.
--
Brand
ON Semiconductor
Item Category
MOSFET
BatchNumber
--
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ON Semiconductor NTLJF3117PT1G is available at Allchips.100% original and new guarantee. If comprehensive data for NTLJF3117PT1G to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
WDFN-6
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 20 V
Id - continuous drain current
- 3.3 A
Rds On - Drain-Source On-Resistance
100 mOhms
Vgs - gate-source voltage
8 V
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
13.2 ns, 15 ns
Forward transconductance - minimum
3.1 S
Height
0.75 mm
Length
2 mm
Pd - Power Dissipation
1.5 W
Product
MOSFET Small Signal
Rise Time
13.2 ns, 15 ns
Series
NTLJF3117P
Factory packing quantity
3000
Transistor type
1 P-Channel
Types
FETs - MOSFETs
Typical shutdown delay time
13.7 ns, 19.8 ns
Typical turn-on delay time
5.2 ns, 5.5 ns
Width
2 mm

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FedEX $20.00-$40.00(0.50KG) 3-7 days
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