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NTR3C21NZT1G

Specification

Mf Part No.

Brand

ON Semiconductor

Item Category

MOSFET

BatchNumber

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Specification

RoHS

yes

Technology

Installation style

SMD/SMT

Package / case

SOT-23-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

20 V

Id - continuous drain current

3.6 A

Rds On - Drain-Source On-Resistance

18 mOhms

Vgs th - gate-source threshold voltage

450 mV

Vgs - gate-source voltage

8 V

Qg - gate charge

17.8 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 150 C

Configuration

Single

Channel mode

Enhancement

Fall time

4.67 us

Forward transconductance - minimum

20 S

Pd - Power Dissipation

470 mW

Rise Time

14 ns

Transistor type

1 N-Channel

Typical shutdown delay time

420 ns

Typical turn-on delay time

7 ns

Unit weight

8 mg

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