Specification
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SOT-23-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - continuous drain current
3.6 A
Rds On - Drain-Source On-Resistance
18 mOhms
Vgs th - gate-source threshold voltage
450 mV
Vgs - gate-source voltage
8 V
Qg - gate charge
17.8 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
4.67 us
Forward transconductance - minimum
20 S
Pd - Power Dissipation
470 mW
Rise Time
14 ns
Transistor type
1 N-Channel
Typical shutdown delay time
420 ns
Typical turn-on delay time
7 ns
Unit weight
8 mg
