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NVB5860NLT4G
Specification
--
Mf Part No.
--
Brand
ON Semiconductor
Item Category
MOSFET
BatchNumber
--
MPQ
800
Stock
0
MOQ
800
Tiered Quantity
US Dollar
1
$34.7139
10
$29.5191
100
$25.5996
250
$24.3126
500
$21.8439
800
$18.4041
2400
$17.5149
4800
$16.8012
Lead Time:5-7
Days
If you need it, please contact our customer service
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ON Semiconductor
NVB5860NLT4G
is available at Allchips.100% original and new guarantee. If comprehensive data for
NVB5860NLT4G
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-263-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - continuous drain current
220 A
Rds On - Drain-Source On-Resistance
2.8 mOhms
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single Dual Drain
Pd - Power Dissipation
283 W
Series
NVB5860NL
Factory packing quantity
800
Transistor type
1 N-Channel
Typical shutdown delay time
98 ns
Typical turn-on delay time
25 ns
Unit weight
4 g
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