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NVR4003NT3G

Specification

Mf Part No.

Brand

ON Semiconductor

Item Category

MOSFET

BatchNumber

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Specification

RoHS

yes

Technology

Installation style

SMD/SMT

Package / case

SOT-23-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - continuous drain current

500 mA

Rds On - Drain-Source On-Resistance

1.5 Ohms

Vgs th - gate-source threshold voltage

1.4 V

Vgs - gate-source voltage

20 V

Qg - gate charge

1.15 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 150 C

Configuration

Single

Fall time

64.2 ns

Pd - Power Dissipation

0.83 W

Rise Time

47.9 ns

Series

NTR4003N

Factory packing quantity

10000

Transistor type

1 N-Channel

Typical shutdown delay time

65.1 ns

Typical turn-on delay time

16.7 ns

Unit weight

8 mg

	Ship Fee	Lead Time	Processing Time
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