Specification
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BatchNumber
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Stock
Lead time
MOQ
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Specification
RoHS
yes
Product
Phototransistors
Package / case
T-1 3/4
Installation style
Through Hole
Peak wavelength
880 nm
开启状态集电极最大电流
50 mA
Collector - Emitter maximum voltage VCEO
35 V
暗电流
50 nA
Rise Time
10 us
Fall time
10 us
Pd - Power Dissipation
200 mW
Minimum working temperature
- 40 C
The maximum working temperature
+ 100 C
集电极—射极击穿电压
35 V
Collector - emitter saturation voltage
150 mV
半强度角度
25 deg
Height
9 mm
Length
5.9 mm
Factory packing quantity
1000
Types
Chip
Wavelength
880 nm
Width
5.9 mm
