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2SCR346PT100P
Specification
Trans GP BJT NPN 400V 0.1A 2000mW 4-Pin(3+Tab) MPT T/R
Mf Part No.
--
Brand
Rohm Semiconductor
Item Category
Bipolar Transistors - BJT
BatchNumber
1725
MPQ
1
Stock
178
MOQ
30
Tiered Quantity
US Dollar
30
$0.406
50
$0.3239
100
$0.2655
Lead Time:6-12
Days
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2SCR346PT100P
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2SCR346PT100P
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SC-62-3
Transistor polarity
NPN
Configuration
Single
Collector - Emitter maximum voltage VCEO
400 V
Collector-base voltage VCBO
400 V
Emitter-base voltage VEBO
7 V
Collector - emitter saturation voltage
100 mV
Maximum DC collector current
100 mA
Gain Bandwidth Product fT
-
The maximum working temperature
+ 150 C
Series
2SxR
Continuous collector current
100 mA
DC collector / Base Gain hfe Min
82 at 10 mA, 10 V
DC current gain hFE maximum
270 at 10 mA, 10 V
Minimum working temperature
- 55 C
Pd - Power Dissipation
500 mW (1/2 W)
Factory packing quantity
1000
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