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2SCR512P5T100
Specification
Trans GP BJT NPN 30V 2A 2000mW 4-Pin(3+Tab) MPT T/R
Mf Part No.
--
Brand
Rohm Semiconductor
Item Category
Bipolar Transistors - BJT
BatchNumber
1716
MPQ
1
Stock
989
MOQ
52
Tiered Quantity
US Dollar
52
$0.1165
100
$0.1157
250
$0.1149
500
$0.1141
Lead Time:6-12
Days
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2SCR512P5T100
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2SCR512P5T100
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SC-62-3
Transistor polarity
NPN
Configuration
Single
Collector - Emitter maximum voltage VCEO
30 V
Collector-base voltage VCBO
30 V
Emitter-base voltage VEBO
6 V
Collector - emitter saturation voltage
200 mV
Maximum DC collector current
2 A
Gain Bandwidth Product fT
320 MHz
The maximum working temperature
+ 150 C
Series
2SxR
Continuous collector current
2 A
DC collector / Base Gain hfe Min
200 at 100 mA, 2 V
DC current gain hFE maximum
500 at 100 mA, 2 V
Minimum working temperature
- 55 C
Pd - Power Dissipation
500 mW (1/2 W)
Factory packing quantity
1000
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