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2SD2661T100

Non-unpack
Specification
Trans GP BJT NPN 12V 2A 4-Pin(3+Tab) MPT T/R
Mf Part No.
--
Brand
Rohm Semiconductor
Item Category
Bipolar Transistors - BJT
BatchNumber
--
MPQ
1
Stock
60
MOQ
34
Tiered Quantity
US Dollar
34
$0.7701
50
$0.2167
 
Lead Time:6-12 Days
Stock Limited
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  • Guarantee
Rohm Semiconductor 2SD2661T100 is available at Allchips.100% original and new guarantee. If comprehensive data for 2SD2661T100 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Installation style
SMD/SMT
Package / case
SOT-89-3
Transistor polarity
NPN
Configuration
Single
Collector - Emitter maximum voltage VCEO
12 V
Collector-base voltage VCBO
15 V
Emitter-base voltage VEBO
6 V
Collector - emitter saturation voltage
90 mV
Maximum DC collector current
2 A
Gain Bandwidth Product fT
360 MHz
The maximum working temperature
+ 150 C
Continuous collector current
2 A
DC collector / Base Gain hfe Min
270 at 200 mA at 2 V
DC current gain hFE maximum
680 at 200 mA at 2 V
Minimum working temperature
-
Pd - Power Dissipation
2 W
Factory packing quantity
1000
Technology
Si

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