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EM6K31T2R
Specification
Trans MOSFET N-CH Si 60V 0.25A 6-Pin EMT T/R
Mf Part No.
--
Brand
Rohm Semiconductor
Item Category
MOSFET
BatchNumber
2025
MPQ
1
Stock
7843
MOQ
140
Tiered Quantity
US Dollar
140
$0.139
1000
$0.1377
Lead Time:6-12
Days
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EM6K31T2R
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EM6K31T2R
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SOT-563-6
Number of channels
2 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V, 60 V
Id - continuous drain current
250 mA, 250 mA
Rds On - Drain-Source On-Resistance
1.7 Ohms, 1.7 Ohms
Vgs th - gate-source threshold voltage
1 V, 1 V
Vgs - gate-source voltage
20 V, 20 V
The maximum working temperature
+ 150 C
Configuration
Dual
Channel mode
Enhancement
Fall time
28 ns, 28 ns
Pd - Power Dissipation
150 mW
Rise Time
5 ns, 5 ns
Series
EM6K31
Factory packing quantity
8000
Transistor type
2 N-Channel
Typical shutdown delay time
18 ns, 18 ns
Typical turn-on delay time
3.5 ns, 3.5 ns
Unit weight
17 mg
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