Specification
Trans MOSFET N-CH 30V 11A 8-Pin HUML EP T/R
Mf Part No.
--
Brand
Rohm Semiconductor
Item Category
MOSFET
BatchNumber
1350
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Rohm Semiconductor
RF4E110BNTR
is available at Allchips.100% original and new guarantee. If comprehensive data for
RF4E110BNTR
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
DFN2020-8
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - continuous drain current
11 A
Rds On - Drain-Source On-Resistance
11.1 mOhms
Vgs th - gate-source threshold voltage
2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
24 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Fall time
11 ns
Forward transconductance - minimum
6 S
Pd - Power Dissipation
2 W
Rise Time
12 ns
Series
RF4E110BN
Factory packing quantity
3000
Transistor type
1 N-Channel
Typical shutdown delay time
43 ns
Typical turn-on delay time
14 ns
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