Specification
N-Channel 800 V 2.5A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Mf Part No.
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Brand
ST Microelectronics
Item Category
MOSFET
BatchNumber
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ST Microelectronics
STD3NK80Z-1
is available at Allchips.100% original and new guarantee. If comprehensive data for
STD3NK80Z-1
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Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-251-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
800 V
Id - continuous drain current
2.5 A
Rds On - Drain-Source On-Resistance
4.5 Ohms
Vgs th - gate-source threshold voltage
4.5 V
Vgs - gate-source voltage
30 V
Qg - gate charge
19 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
40 ns
Forward transconductance - minimum
2.1 S
Height
6.2 mm
Length
6.6 mm
Pd - Power Dissipation
70 W
Rise Time
27 ns
Series
N-channel MDmesh
Factory packing quantity
3000
Transistor type
1 N-Channel
Typical shutdown delay time
36 ns
Typical turn-on delay time
17 ns
Width
2.4 mm
Unit weight
4 g