Specification
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Brand
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BatchNumber
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MPQ
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Lead time
MOQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
900 V
Id - continuous drain current
3 A
Rds On - Drain-Source On-Resistance
4.8 Ohms
Vgs - gate-source voltage
30 V
Qg - gate charge
22.7 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
18 ns
Forward transconductance - minimum
2.7 S
Height
2.4 mm
Length
6.6 mm
Pd - Power Dissipation
90 W
Rise Time
7 ns
Series
STD3NK90Z
Factory packing quantity
2500
Transistor type
1 N-Channel
Types
MOSFET
Typical shutdown delay time
45 ns
Typical turn-on delay time
18 ns
Width
6.2 mm
Unit weight
4 g
