Specification
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Mf Part No.
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Brand
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Item Category
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BatchNumber
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MPQ
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Stock
Lead time
MOQ
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Tiered Quantity
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Specification
RoHS
yes
Technology
Si
Installation style
Through Hole
Package / case
TO-220-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - continuous drain current
10 A
Rds On - Drain-Source On-Resistance
550 mOhms
Vgs th - gate-source threshold voltage
4 V
Vgs - gate-source voltage
25 V
Qg - gate charge
19 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
15 ns
Pd - Power Dissipation
70 W
Rise Time
12 ns
Series
N-channel MDmesh
Factory packing quantity
1000
Transistor type
1 N-Channel
Typical shutdown delay time
32 ns
Typical turn-on delay time
10 ns
Unit weight
330 mg
