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STF10NM60N

Specification

Mf Part No.

Brand

ST Microelectronics

Item Category

MOSFET

BatchNumber

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Specification

RoHS

yes

Technology

Installation style

Through Hole

Package / case

TO-220-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - continuous drain current

10 A

Rds On - Drain-Source On-Resistance

550 mOhms

Vgs th - gate-source threshold voltage

4 V

Vgs - gate-source voltage

25 V

Qg - gate charge

19 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 150 C

Configuration

Single

Channel mode

Enhancement

Fall time

15 ns

Pd - Power Dissipation

70 W

Rise Time

12 ns

Series

N-channel MDmesh

Factory packing quantity

1000

Transistor type

1 N-Channel

Typical shutdown delay time

32 ns

Typical turn-on delay time

10 ns

Unit weight

330 mg

	Ship Fee	Lead Time	Processing Time
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TNT	$25.00-$65.00(0.50KG)	2-5 days
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FedEX	$20.00-$40.00(0.50KG)	3-7 days