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STGB20NB37LZT4

Non-unpack
Specification
--
Mf Part No.
--
Brand
ST Microelectronics
Item Category
IGBT Transistors
BatchNumber
--
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ST Microelectronics STGB20NB37LZT4 is available at Allchips.100% original and new guarantee. If comprehensive data for STGB20NB37LZT4 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Package / case
D2PAK-3
Installation style
SMD/SMT
Configuration
Single
Collector - Emitter maximum voltage VCEO
20 V
Collector - emitter saturation voltage
2 V
Gate / emitter maximum voltage
12 V
Continuous collector current at 25 ° C
40 A
Pd - Power Dissipation
200 W
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Series
STGB20NB37LZ
Continuous collector current
20 A
集电极最大连续电流 Ic
40 A
Gate-emitter leakage current
+/- 660 uA
Height
4.6 mm
Length
10.4 mm
Factory packing quantity
1000
Width
9.35 mm
Unit weight
2.240 g

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FedEX $20.00-$40.00(0.50KG) 3-7 days
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