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STGW20IH125DF

Non-unpack
Specification
--
Mf Part No.
--
Brand
ST Microelectronics
Item Category
IGBT Transistors
BatchNumber
--
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ST Microelectronics STGW20IH125DF is available at Allchips.100% original and new guarantee. If comprehensive data for STGW20IH125DF to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Package / case
TO-247-3
Installation style
Through Hole
Configuration
Single
Collector - Emitter maximum voltage VCEO
1.25 kV
Collector - emitter saturation voltage
2.55 V
Gate / emitter maximum voltage
20 V
Continuous collector current at 25 ° C
40 A
Pd - Power Dissipation
259 W
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Series
900-1300V IGBTs
集电极最大连续电流 Ic
20 A
Gate-emitter leakage current
250 nA
Factory packing quantity
600
Unit weight
38 g

Shipping Type Ship Fee Lead Time Processing Time
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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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