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STGW20IH125DF
Specification
--
Mf Part No.
--
Brand
ST Microelectronics
Item Category
IGBT Transistors
BatchNumber
--
MPQ
600
Stock
0
MOQ
600
Tiered Quantity
US Dollar
1
$29.9169
10
$25.4358
100
$21.996
250
$20.8728
500
$18.8019
1000
$15.8418
2500
$15.0345
5000
$14.4729
Lead Time:5-7
Days
- Details
- Shipping
- Payment Method
- Guarantee
ST Microelectronics
STGW20IH125DF
is available at Allchips.100% original and new guarantee. If comprehensive data for
STGW20IH125DF
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Package / case
TO-247-3
Installation style
Through Hole
Configuration
Single
Collector - Emitter maximum voltage VCEO
1.25 kV
Collector - emitter saturation voltage
2.55 V
Gate / emitter maximum voltage
20 V
Continuous collector current at 25 ° C
40 A
Pd - Power Dissipation
259 W
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Series
900-1300V IGBTs
集电极最大连续电流 Ic
20 A
Gate-emitter leakage current
250 nA
Factory packing quantity
600
Unit weight
38 g
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