Specification
High Frequency Synchronous Power Module
Mf Part No.
--
Brand
Texas Instruments
Item Category
MOSFET
BatchNumber
2009
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CSD87334Q3DT
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CSD87334Q3DT
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
VSON-8
Number of channels
2 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V, 30 V
Id - continuous drain current
20 A, 20 A
Rds On - Drain-Source On-Resistance
8.3 mOhms, 8.3 mOhms
Vgs th - gate-source threshold voltage
750 mV, 750 mV
Vgs - gate-source voltage
8 V, 8 V
Qg - gate charge
8.3 nC, 8.3 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Dual
Channel mode
Enhancement
Development Kit
VSON
Fall time
17 ns, 17 ns
Forward transconductance - minimum
62 S
Height
1 mm
Length
3.3 mm
Pd - Power Dissipation
6 W
Rise Time
7 ns, 7 ns
Series
CSD87334Q3D
Factory packing quantity
250
Typical shutdown delay time
11 ns, 11 ns
Typical turn-on delay time
4 ns, 4 ns
Width
3.3 mm
Unit weight
76 mg
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