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CSD87335Q3DT

Non-unpack
Specification
High Frequency Synchronous Power Module
Mf Part No.
--
Brand
Texas Instruments
Item Category
MOSFET
BatchNumber
--
MPQ
250
Stock
10000
MOQ
250
Tiered Quantity
US Dollar
250
$0.6996
 
Lead Time:6-12 Days
Stock Limited
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  • Guarantee
Texas Instruments CSD87335Q3DT is available at Allchips.100% original and new guarantee. If comprehensive data for CSD87335Q3DT to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
LSON-CLIP-8
Number of channels
2 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V, 30 V
Id - continuous drain current
25 A
Rds On - Drain-Source On-Resistance
2.4 Ohms, 1.2 Ohms
Vgs th - gate-source threshold voltage
1 V, 750 mV
Vgs - gate-source voltage
10 V, 10 V
Qg - gate charge
5.7 nC, 10.7 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Dual
Channel mode
Enhancement
Fall time
4 ns, 5 ns
Forward transconductance - minimum
59 S, 107 S
Height
1.5 mm
Length
3.3 mm
Pd - Power Dissipation
6 W
Rise Time
29 ns, 27 ns
Series
CSD87335Q3D
Factory packing quantity
250
Transistor type
2 N-Channel
Typical shutdown delay time
13 ns, 17 ns
Typical turn-on delay time
8 ns, 8 ns
Width
3.3 mm

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