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CSD87502Q2T

Specification

High Frequency Synchronous Power Module

Mf Part No.

Brand

Texas Instruments

Item Category

MOSFET

BatchNumber

MPQ

250

Stock

10000

MOQ

250

Tiered Quantity

US Dollar

250

$0.64

Lead Time:6-12 Days

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Specification

RoHS

yes

Technology

Installation style

SMD/SMT

Package / case

WSON-FET-6

Number of channels

2 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V, 30 V

Id - continuous drain current

5.0 A

Rds On - Drain-Source On-Resistance

35 mOhm

Vgs th - gate-source threshold voltage

1.2 V, 1.2 V

Vgs - gate-source voltage

20 V, 20 V

Qg - gate charge

6 nC, 6 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 150 C

Configuration

Dual

Channel mode

Enhancement

Fall time

3 ns, 3 ns

Forward transconductance - minimum

75 S, 75 S

Height

0.75 mm

Length

2 mm

Pd - Power Dissipation

2.3 W

Rise Time

11 ns, 11 ns

Series

CSD87502Q2

Factory packing quantity

250

Transistor type

2 N-Channel

Typical shutdown delay time

12 ns, 12 ns

Typical turn-on delay time

3 ns, 3 ns

Width

2 mm

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