2SK3475TE12LF
Specification
Trans RF MOSFET N-CH 20V 1A 4-Pin(3+Tab) PW-Mini T/R
Mf Part No.
--
Brand
Toshiba
Item Category
RF MOSFET Transistors
BatchNumber
1640
MPQ
1000
Stock
1000
MOQ
1000
Tiered Quantity
US Dollar
1000
$1.2304
Lead Time:6-12
Days
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Toshiba
2SK3475TE12LF
is available at Allchips.100% original and new guarantee. If comprehensive data for
2SK3475TE12LF
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Transistor polarity
N-Channel
Id - continuous drain current
1 A
Vds - Drain-Source Breakdown Voltage
20 V
Technology
Si
Gain
14.9 dB
Output Power
630 mW
Installation style
SMD/SMT
Package / case
PW-Mini-3
Configuration
Single
working frequency
520 MHz
Pd - Power Dissipation
3 W
Series
2SK3475
Factory packing quantity
1000
Types
RF Power MOSFET
Vgs - gate-source voltage
10 V
Vgs th - gate-source threshold voltage
2.4 V
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